Paper number 889


Yutaka Shinoda1, Hui Gu1 and Fumihiro Wakai2

1Japan Science and Technology Corporation, ICORP "Ceramics Superplasticity",
JFCC 2F, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
2Center for Materials Design, Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Summary Nanocrystalline silicon carbide/carbon (SiC/C) composite was fabricated from ultra-fine SiC powder containing 3.7 wt.% free carbon by ultra-high pressure hot isostatic pressing (HIP) at the pressure of 980 MPa at 1600 C. The average SiC grain size of the composite was 30 nm , and the carbon existed at SiC grain boundary as excess carbon or as graphite layer. The high temperature deformation behavior of this material was investigated by a tensile test at the temperatures from 1800C to 2000C at the initial strain rates from 110-5 s-1 to 110-4 s-1. The nanocrystalline SiC/C composite exhibited extremely high strength and high ductility at elevated temperature.
Keywords nanocrystalline, silicon carbide, mechanical property, superplasticity, grain growth.

Theme : Ceramic Matrix and C/C Composites ; Thermo-mechanical behaviour

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